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Gallium nitride GaN technology is driving the 5G era

2019-04-26
Although GaN devices are gradually available in the communication base stations, it will take a long time for them to be used in ordinary mobile phones.Mobile operators are struggling to keep up with the explosive growth of data traffic.According to the prediction of Ericsson, from 2018 to 2023, the global mobile communication data traffic will increase by 45% every year. In the future, if the mobile communication operators do not adopt GaN technology, they may not be able to meet the needs of users.

Carrier convergence and mass multiplayer multiplexing require communication base stations to gradually adopt power amplifiers with better performance.Previous rf power amplifiers used in communication base stations are mainly based on LDMOS technology of silicon Si. However, the limit frequency of LDMOS technology of silicon Si cannot exceed 3.5GHz, and the LDMOS technology of silicon Si cannot satisfy the wider bandwidth of over 300 MHz required by video data.

To sum up, communication base stations have begun to replace silicon Si LDMOS devices with gallium nitride GaN devices.Silicon Si's LDMOS devices have reached their physical limits, which is why gallium nitride GaN devices have entered the communications market.With the explosive growth of data traffic, communication base stations increasingly require devices with higher peak power, wider bandwidth and higher frequency, which makes the application of gallium nitride GaN devices in communication base stations inevitable.
4G mobile phones mainly use GaAs and Si based rf devices, but in the future 5G era, in addition to GaAs and Si based rf devices, also use GaN based rf devices, especially in high frequency applications.