Gallium selenide isone amongstthe foremostpromising candidatesto increasethe window of band gap values provided by existing two-dimensional semiconductors deep into the visibleprobablyreaching the ultraviolet. However, the tunability of its band gap bysug

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Metal sulfides (MSs)ought tobepossiblecandidates for hybridchemical sciencecapacitors (HECs)because oftheir high theoretical specific capacitances. However, their performancessquare measuremostlyhampered by sluggish ion/electron transportmechanicsandquick

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Iron silicide is grey powder, odorless, tetragonal. Used as catalyst for hydrogen oxidation and methanation, especially as deoxidizer for welding flux, humidity sensor, FeSi2 thermocouple and thermoelectric solar cell. A high-temperature reductiontechniqu

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Known as the industrial vitamin, rare earth elements are extremely important strategic resources and are widely used in petroleum, chemical industry, metallurgy, textile, ceramics, glass, permanent magnet materials and other fields. Therefore, the researc

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The rare-earth nitridesarea unitexhaustingand brittle materials, sensitive tochemical reactionandchemical reaction. These compounds crystallize in rock-saltform ofstructure. The potential application of rare-earthcompoundis in spintronics. Cerium nitride

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Indium sulfide (In2S3) is a typical narrow band gap semiconductor material. The width of the direct band gap is generally from 1. 9 to 2. 2 eV. However, -in2s3 has the most stable structure and has been widely used as a visible light catalyst for the degr

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Thermoelectric material, also known as thermoelectric power generation material, is a new type of functional material that USES Seebeck effect and Peltier effect to convert heat energy into electric energy. It can not only use its thermoelectric power gen

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Lithium 12-hydroxystearate is widely used in lubricants, stabilizers, decolorizers and thickeners. This grease had a droppingpurposeofover600F., and a worked penetration of 283 at 77F.whensixtystrokes. It hadAssociate in Nursingin operationvaryof -40F. to

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Vanadium diboride (VB2) has a hexagonal crystal structure, melting point of 2980 degrees Celsius, high hardness, oxidation resistance temperature of 1000 degrees Celsius, can be used in conductive ceramic materials and other fields, belongs to the ato

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The paper presents experimentalinformationof thermal studies ofcomplexsupportedatomic number 64nitrate with the DSC method; the study was performedwithin thetemperaturevaryfrom 298 to 1273 C. The thermal analysis hasmanyblessingsoverthe oppositemethods: e

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