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Application of semiconductor nano-bismuth sulfide materials

Metallic sulfide group (MS, MSe, MTe, M stands for metal) semiconductor nanomaterials have a wide application prospect due to their special properties such as nonlinear, fluorescence characteristics, quantum effects and other important physical and chemical properties.

Bismuth sulfide(Bi2S3) is Ⅴ - Ⅵ direct band gap of inorganic semiconductor materials, at room temperature the forbidden band width of Eg = 1.30 eV, stability, non-toxic, environmentally friendly, photovoltaic conversion, excellent electric properties, the Peltier effect and a series of excellent properties such as eigen photoconductive in the photovoltaic, solar cells, photoelectric diode array, thermoelectric optoelectronic devices and infrared spectroscopy has potential applications, so in recent years has attracted more and more attention.

In recent years, researches on Bi2S3 nanomaterials have mainly focused on obtaining nanostructures with different morphologies and properties. The nanostructures synthesized by researchers include: nanowires, nanotubes, nanobars, nanofibers, nanosheets, nanospheres, nanoflowers and quantum dots.These novel nanostructures often have unique properties and thus have new applications in many fields such as optoelectronics, thermoelectricity, sensors, biomolecular detection and biomedicine.For example, bismuth sulfide nanoparticles, with absorption edge at 800nm, are a good photosensitive material for solar cells. Cross-linked ultra-thin bismuth sulfide nanowires can be used as platforms for the formation of nanostructures for biomolecular detection.