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Synthesis and application of tantalum silicide

2019-03-04
Tantalum silicide is a very important high temperature structural material and electrical material.Because of its high hardness, high melting point, oxidation resistance and good thermal conductivity, etc., in the integrated circuit, many fields such as aerospace, engine, it has a great application potential, thus has been more and more attention of people from physics and material science field.
 
TaSi2 has a sexy combination of properties, as well as a high freezing point of 2200 °C, high thermal stability , low contact resistance , a high modulus of snap, a high resistance to oxidization in air, and a decent compatibility with Si. because of its low resistance and oxidization resistance, TaSi2 has been used in change devices as Schottky barriers, resistance unit contacts, and connectors in integrated circuits. within the gift work, JL particles with a golden TaSi2end and a semiconductive Si finish were synthesized. This composition ought to result in a spacial separation of electrons and also the look of polarization charges, resulting in the presence of a moment. Thus, the spacial orientation of those JL nanoparticles ought to be governable by the interaction of the moment with Associate in Nursing external magnetic attraction field .

The use of chemical compound interconnects in VLSI circuits is changing into common. However, very little has been printed on the metallic element to Tantalum silicide contact window dependableness. we tend to report life take a look at results for 2 geometries of Al-Si-Cu to TaSi2 contact windows. High activation energies, moderate sigmas and huge current density exponents area unit discovered. elaborated EMA exploitationcustomary and novel SEM techniques shows metallic element void formation on the window sidewalls and at the Al/TaSi2 interface together of the failure modes. Transition of the contact to a high resistance nonohmic state is another. we tend to show these 2 modes of failure to occur inside totally different temperature ranges and propose that this is often because of differing activation energies. we tend to conclude that the nonohmic failure mode are dominant at typical operational temperatures however operational lifetimes of such structures will bemany years.