Hexagonal Boron Nitride, also called h-BN, is a wide-gap semiconductor material that has the potential to be used as a light-emitting diode. The material has several unique properties that make it ideal for this type of application. Its high electrical resistivity, chemical inertness and temperature stability are just a few of its characteristics.

The bandgap of h-BN depends on the number of layers that are stacked. Among the most important factors determining the bandgap of h-BN are inter-layer interactions. In particular, boron nitride's partially ionic structure increases inter-layer interaction. This modifies the electronic structure of the crystal.

The valence band of h-BN is maximum at the K point, which is near the conduction band minimum. The bandgap can vary depending on the number of layers stacked and the inter-layer interactions.

Quantum emitters can be enhanced by electrostatic tuning and plasmonic coupling. Two-laser excitation and external strain engineering can also be used to enhance emission. Various types of luminescent point defects, including NBVN, CBVN and OBOBVN, are possible. These point defects are typically formed during annealing on the substrate.

Several studies have shown that hexagonal boron nitride (h-BN) can be used to build an FUV plane light-emitting device. This technology has also shown the ability to achieve high luminous intensity in the FUV region. However, its optical properties are not fully understood. In this article, we review recent studies of h-BN growth, optical properties, and device applications.

Hexagonal boron nitride exhibits a high refractive index. The material has an indirect bandgap of 5.79 eV. At the high symmetry K point, the bandgap is 7.25 eV.